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HYG009N04LS1C2
Manufacturer
HUAYI MICROELECTRONICSManufacturer Product Number
HYG009N04LS1C2
Description
场效应管(MOSFET) 75W 40V 200A 1个N沟道 DFN-8(5.1x5.8)
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Threshold Voltage | 1.8V@250μA |
| Drain-Source Voltage | 40V |
| Operating Temperature | -55℃ ~ +175℃ |
| Power | 75W |
| Continuous Drain Current | 200A |
| Gate Charge | 41nC @ 4.5V |
| Reverse Transfer Capacitance | 58pF @ 25V |
| On-Resistance | 0.75mΩ @ 10V, 40A |
| Input Capacitance | 5.876nF @ 25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 39,844
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6239 | |
| 10+ | $ 0.5375 | |
| 30+ | $ 0.4749 | |
| 100+ | $ 0.4247 | |
| 500+ | $ 0.3231 | |
| 1000+ | $ 0.3147 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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