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HYG022N10NS1TA
Manufacturer
HUAYI MICROELECTRONICSManufacturer Product Number
HYG022N10NS1TA
Description
场效应管(MOSFET) 312W 100V 249A 1个N沟道 TOLL
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Drain-Source Voltage | 100 V |
| Operating Temperature | -55℃ ~ +175℃ |
| Power | 312W |
| Threshold Voltage | 3.1 V @ 250 μA |
| Continuous Drain Current | 249 A |
| Gate Charge | 160.5 nC @ 10V |
| Reverse Transfer Capacitance | 186.6 pF @ 25V |
| On-Resistance | 2.2 mΩ @ 10V, 50A |
| Input Capacitance | 9.026 nF @ 25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,842
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.0834 | |
| 10+ | $ 0.9149 | |
| 30+ | $ 0.8230 | |
| 100+ | $ 0.7186 | |
| 500+ | $ 0.6280 | |
| 1000+ | $ 0.6071 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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