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HYG025N06LS1D

Manufacturer

HUAYI MICROELECTRONICS

Manufacturer Product Number

HYG025N06LS1D

Description

场效应管(MOSFET) 125W 60V 160A 1个N沟道 TO-252-2

Manufacturer Standard Lead Time

5-7个

Detailed Description

场效应管(MOSFET) 125W 60V 160A 1个N沟道 TO-252-2

Product Attributes

Type Description
Category Boxes, Enclosures, Racks andBox Components
Type 1 N-channel
Drain-Source Voltage 60 V
Power 125W
Threshold Voltage 2.1 V @ 250 μA
Continuous Drain Current 160 A
Gate Charge 58.3nC@10V
Reverse Transfer Capacitance 10.2pF@25V
On-Resistance 2.6mΩ@10V,40A
Input Capacitance 3.915nF@25V

Documents & Media

Resource Type Link

Environmental & Export Classifications

Attribute Description

Additional Resources

Attribute Description

In Stock: 4,639

Quantity Unit Price Ext Price
1+ $ 0.5473
10+ $ 0.4498
30+ $ 0.3997
100+ $ 0.3523
500+ $ 0.2827
1000+ $ 0.2674
Price For:Each

Minimum:1/Multiple:1

Total amount:

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