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HYG053N10NS1C2
Manufacturer
HUAYI MICROELECTRONICSManufacturer Product Number
HYG053N10NS1C2
Description
场效应管(MOSFET) 83.3W 100V 95A 1个N沟道 PDFN-8(5x5.8)
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Threshold Voltage | 3V @ 250μA |
| Drain-Source Voltage | 100 V |
| On-Resistance | 4.6mΩ @ 10V, 20A |
| Operating Temperature | -55℃ ~ +175℃ |
| Continuous Drain Current | 95A |
| Gate Charge | 73 nC @ 10 V |
| Power | 83.3W |
| Reverse Transfer Capacitance | 153pF@25V |
| Input Capacitance | 3.744nF@25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 30,737
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3718 | |
| 10+ | $ 0.2938 | |
| 30+ | $ 0.2548 | |
| 100+ | $ 0.2089 | |
| 500+ | $ 0.1824 | |
| 1000+ | $ 0.1769 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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