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HYG060N08NS1D
Manufacturer
HUAYI MICROELECTRONICSManufacturer Product Number
HYG060N08NS1D
Description
场效应管(MOSFET) 75W 80V 80A 1个N沟道 TO-252-2
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Threshold Voltage | 3V @ 250μA |
| Drain-Source Voltage | 80 V |
| Continuous Drain Current | 80A |
| Operating Temperature | -55℃ ~ +175℃ |
| Power | 75W |
| Gate Charge | 48nC @ 10V |
| Reverse Transfer Capacitance | 60 pF @ 25 V |
| On-Resistance | 5.7mΩ@10V,40A |
| Input Capacitance | 2.96nF@25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,885
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.3509 | |
| 50+ | $ 0.2799 | |
| 150+ | $ 0.2493 | |
| 500+ | $ 0.2117 | |
| 2500+ | $ 0.1769 | |
| 5000+ | $ 0.1671 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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