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HYG120P06LR1D
Manufacturer
HUAYI MICROELECTRONICSManufacturer Product Number
HYG120P06LR1D
Description
场效应管(MOSFET) 75W 60V 55A 1个P沟道 TO-252
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 60 V |
| Type | 1 P-Channel |
| Continuous Drain Current | 55 A |
| Threshold Voltage | 1.8V@250μA |
| Power | 75W |
| Gate Charge | 46.3nC@10V |
| Reverse Transfer Capacitance | 195 pF @ 25 V |
| On-Resistance | 12.5mΩ@10V,20A |
| Input Capacitance | 4.882nF @ 25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,531
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3871 | |
| 10+ | $ 0.3078 | |
| 30+ | $ 0.2757 | |
| 100+ | $ 0.2326 | |
| 500+ | $ 0.1991 | |
| 1000+ | $ 0.1880 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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