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HYG180N10LS1P
Manufacturer
HUAYI MICROELECTRONICSManufacturer Product Number
HYG180N10LS1P
Description
场效应管(MOSFET) 93.7W 100V 50A 1个N沟道 TO-220FB-3
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Drain-Source Voltage | 100 V |
| Threshold Voltage | 1.8V@250μA |
| Continuous Drain Current | 50A |
| Gate Charge | 11.6 nC @ 10 V |
| Power | 93.7W |
| Reverse Transfer Capacitance | 22.8pF@25V |
| On-Resistance | 16.5mΩ@10V, 25A |
| Input Capacitance | 1.606nF@25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 15
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.3704 | |
| 50+ | $ 0.2632 | |
| 150+ | $ 0.2312 | |
| 500+ | $ 0.1894 | |
| 2000+ | $ 0.1713 | |
| 5000+ | $ 0.1615 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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