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HYG210P06LQ1D
Manufacturer
HUAYI MICROELECTRONICSManufacturer Product Number
HYG210P06LQ1D
Description
场效应管(MOSFET) 60W 60V 40A 1个P沟道 TO-252-2
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 60 V |
| Type | 1 P-Channel |
| Continuous Drain Current | 40 A |
| Operating Temperature | -55℃ ~ +175℃ |
| Threshold Voltage | 1.7 V @ 250 μA |
| Power | 60W |
| Gate Charge | 90nC@10V |
| Reverse Transfer Capacitance | 60 pF @ 25 V |
| On-Resistance | 19 mΩ @ 10 V, 20 A |
| Input Capacitance | 3.679 nF @ 25 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,265
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.2590 | |
| 50+ | $ 0.2061 | |
| 150+ | $ 0.1838 | |
| 500+ | $ 0.1476 | |
| 2500+ | $ 0.1225 | |
| 5000+ | $ 0.1156 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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