Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
AO6800-HXY
Manufacturer
HUAXUANYANGManufacturer Product Number
AO6800-HXY
Description
场效应管(MOSFET) 1.25W 30V 5A 2个N沟道
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 30V |
| Power | 1.25 W |
| Type | 2 N-channel |
| Gate Charge | 3nC@10V |
| Continuous Drain Current | 4.5A |
| Reverse Transfer Capacitance | 33pF@15V |
| Input Capacitance | 233 picofarads @ 15V |
| On-Resistance | 29mΩ@10V,4A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,780
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0710 | |
| 200+ | $ 0.0446 | |
| 1500+ | $ 0.0390 | |
| 3000+ | $ 0.0348 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
AO6800-MS
N+N沟道,VDSS耐压30V,ID电流5A,RDON导通电阻23mR@VGS4.5V(MAX),VGS(th)开启电压0.5-1.2V,
MSKSEMI
AO6801A-VB
--
Vbsemi
AO6801E-VB
--
Vbsemi
AO6802
Transistor: N-MOSFET x2; unipolar; 30V; 3A; 730mW; TSOP6
AOS