Manufacturer
UNISManufacturer Product Number
TPW65R044MFD
Description
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件,无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSFET平台,量产600V/650V /700V /800V等系列产品,已广泛应用于消费、通信、工控、新能源等领域。同时,紧跟主流技术发展趋势,不断优化和升级产品设计,为客户打造更具性能优势的高可靠性产品。
Manufacturer Standard Lead Time
5-7个
Detailed Description
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件,无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSFET平台,量产600V/650V /700V /800V等系列产品,已广泛应用于消费、通信、工控、新能源等领域。同时,紧跟主流技术发展趋势,不断优化和升级产品设计,为客户打造更具性能优势的高可靠性产品。
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Operating Temperature | -55 ℃ ~ +150 ℃ |
| Drain-Source Voltage | 650V |
| Threshold Voltage | 5V@250μA |
| Power | 500 W |
| Continuous Drain Current | 72A |
| Gate Charge | 165nC @ 10V |
| Reverse Transfer Capacitance | 13.2pF@100V |
| On-Resistance | 39mΩ@10V,36A |
| Input Capacitance | 7.837nF@100V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 4.4826 | |
| 10+ | $ 3.7989 | |
| 30+ | $ 3.3908 |
Minimum:1/Multiple:1
Total amount: