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SI2301CDS-T1-GE3-ES
Manufacturer
EIECSUPERManufacturer Product Number
SI2301CDS-T1-GE3-ES
Description
场效应管(MOSFET) 1W 20V 3A 1个P沟道 SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 1 W |
| Drain-Source Voltage | 20V |
| Type | 1 P-Channel |
| Continuous Drain Current | 3A |
| Threshold Voltage | 700mV@250μA |
| Reverse Transfer Capacitance | 55pF |
| Gate Charge | 3.3nC |
| On-Resistance | 58mΩ@4.5V,3A |
| Input Capacitance | 405pF |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4,393
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0432 | |
| 200+ | $ 0.0139 | |
| 1500+ | $ 0.0084 | |
| 3000+ | $ 0.0070 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI2301CDS-T1-GE3-HXY
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HUAXUANYANG
SI2301CDS-T1-GE3-MS
类型：P沟道漏源电压(Vdss)：-20V连续漏极电流(Id)：-3A功率(Pd)：1.56W导通电阻(RDS(on)@Vgs,Id)：70mΩ@4.5V,3A阈值电压Vgs(th)@Id)：-0.3V至-1.1V@250uA
MSKSEMI
SI2301DS
场效应管(MOSFET) SI2301DS SOT-23-3
TECH PUBLIC
SI2301DS
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TECH PUBLIC
