Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
AO3421E
Manufacturer
AOSManufacturer Product Number
AO3421E
Description
MOSFET P-CH 30V 3A SOT23
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 2.5 V @ 250 μA |
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 3A |
| Power | 1.4W |
| Gate Charge | 8nC@10V |
| On-Resistance | 95mΩ@3A, 10V |
| Input Capacitance | 215pF@15V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,206
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.2548 | |
| 25+ | $ 0.1560 | |
| 100+ | $ 0.1253 | |
| 500+ | $ 0.1170 | |
| 3000+ | $ 0.1086 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
AO3421E-VB
--
Vbsemi
AO3422
类型：N沟道漏源电压(Vdss)：-55V连续漏极电流(Id)：2A功率(Pd)：1.56W导通电阻(RDS(on)@Vgs,Id)：120mΩ@10V,2A阈值电压(Vgs(th)@Id)：1.0V@250uAN沟道,55V,2A,120mΩ@10V
MSKSEMI
AO3422
--
TECH PUBLIC
AO3422
晶体管: N-MOSFET; 单极; 55V; 1.7A; 800mW; SOT23
AOS
