Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
AOD66923
Manufacturer
AOSManufacturer Product Number
AOD66923
Description
场效应管(MOSFET) 6.2W；73W 100V 16.5A；58A 1个N沟道 TO-252-2
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Gate Charge | 35nC@10V |
| Threshold Voltage | 2.6V@250μA |
| On-Resistance | 11 mΩ @ 20 A, 10 V |
| Continuous Drain Current | 16.5A, 58A |
| Power | 6.2W, 73W |
| Input Capacitance | 1725pF@50V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 27,717
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6308 | |
| 10+ | $ 0.5194 | |
| 30+ | $ 0.4651 | |
| 100+ | $ 0.4094 | |
| 500+ | $ 0.3607 | |
| 1000+ | $ 0.3426 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
AOD66923-HXY
--
HUAXUANYANG
AOD6B60M1
Transistor: IGBT; 600V; 6A; 28W; TO252; Eoff: 0.09mJ; Eon: 0.12mJ
AOS
AOD7N65
场效应管(MOSFET) 178W 650V 7A 1个N沟道 TO-252-2
AOS
AOD7S60
--
AOS
