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2DB1132R-13
Manufacturer
DiodesManufacturer Product Number
2DB1132R-13
Description
雙極性晶體管- BJT 1000W -32Vceo
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Power | 1 W |
| Te Zheng Frequency | 190MHz |
| Jing Ti Guan Type | PNP |
| Ji Dian Ji Jie Zhi Current（icbo） | 500nA |
| Ji Dian Ji Current（ic） | 1A |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 500mV@50mA, 500mA |
| Ji She Ji Ji Chuan Voltage（vceo） | 32V |
| DC Gain (hFE@Ic, Vce) | 180@100mA, 3V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,180
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.8578 | |
| 10+ | $ 0.5347 | |
| 100+ | $ 0.3467 | |
| 500+ | $ 0.2660 | |
| 1000+ | $ 0.2089 | |
| 5000+ | $ 0.1769 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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