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BSN20Q-7
Manufacturer
DiodesManufacturer Product Number
BSN20Q-7
Description
场效应管(MOSFET) 600mW；920mW 50V 500mA 1个N沟道 SOT-23-3
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Input Capacitance | 10pF |
| Gate-Source Breakdown Voltage | 50V |
| Drain-Source On-Resistance | 1.8Ω |
| Drain-Source Saturation Current | 0.5A |
| Power | 0.92W |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 143
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0905 | |
| 200+ | $ 0.0585 | |
| 1500+ | $ 0.0501 | |
| 3000+ | $ 0.0432 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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晶体管: N-MOSFET; 单极; 30V; 20A; 1.56W; PG-DSO-8; OptiMOS™ 3
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BSO080P03S H
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