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DMN1019USN-13
Manufacturer
DiodesManufacturer Product Number
DMN1019USN-13
Description
场效应管(MOSFET) 680mW 12V 9.3A 1个N沟道 SC-59
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 1.2 W |
| Gate-Source Breakdown Voltage | 12V |
| Drain-Source Saturation Current | 9.3A |
| Drain-Source On-Resistance | 0.01Ω |
| Input Capacitance | 375pF |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,954
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1532 | |
| 100+ | $ 0.1212 | |
| 500+ | $ 0.1086 | |
| 2500+ | $ 0.1003 | |
| 5000+ | $ 0.0947 | |
| 10000+ | $ 0.0877 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDMN1019USN-7
漏源电压（Vdss）：12V 连续漏极电流（Id）（25°C 时）：9.3A 栅源极阈值电压：800mV @ 250uA 漏源导通电阻：10mΩ @ 9.7A,4V 最大功率耗散（Ta=25°C）：680mW 类型：N沟道
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DMN1019USN-7
MOSFET 12V N-Ch Enh FET 2426pF 27.3nC
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场效应管(MOSFET) 1.73W 12V 10.7A 1个N沟道 TSOT-23-6
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