Manufacturer
DiodesManufacturer Product Number
DMN10H120SE-13
Description
Transistor: N-MOSFET; unipolar; 100V; 3.4A; 1.3W; SOT223
Manufacturer Standard Lead Time
3-5
Detailed Description
Transistor: N-MOSFET; unipolar; 100V; 3.4A; 1.3W; SOT223
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 3 V @ 250 µA |
| Type | N-channel |
| Power | 1.3W |
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 3.6A |
| Gate Charge | 10nC@10V |
| On-Resistance | 110mΩ @ 3.3A, 10V |
| Input Capacitance | 549pF@50V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6002 |
Minimum:1/Multiple:1
Total amount:
DMN10H120SFG-13
DiodesZetex Si N沟道 MOSFET DMN10H120SFG-13, 5.3 A, Vds=100 V, 8引脚 POWERDI3333封装
Diodes
DMN10H120SFG-13
DiodesZetex Si N沟道 MOSFET DMN10H120SFG-13, 5.3 A, Vds=100 V, 8引脚 POWERDI3333封装
Diodes