Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
DMN10H220LK3-13
Manufacturer
DiodesManufacturer Product Number
DMN10H220LK3-13
Description
MOSFET MOSFET BVDSS: 61V~100V TO252 T&R 2.5K
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 100V |
| Drain-Source On-Resistance | 0.22Ω |
| Drain-Source Saturation Current | 7.5A |
| Input Capacitance | 17pF |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,334
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.2380 | |
| 10+ | $ 0.7659 | |
| 100+ | $ 0.4916 | |
| 500+ | $ 0.3732 | |
| 1000+ | $ 0.3356 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDMN10H220LPDW-13
--
Diodes
DMN10H220LQ-7
表面贴装 N 沟道 100V 1.6A（Ta） 1.3W（Ta） SOT-23-3
Diodes
DMN10H220LQ-7
场效应管(MOSFET) 1.3W 100V 1.6A 1个N沟道 SOT-23-3
Diodes
DMN10H220LQ-7
MOSFET MOSFET BVDSS: 61V~100V SOT23 T&R 3K
Diodes
