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DMN2004K-7
Manufacturer
DiodesManufacturer Product Number
DMN2004K-7
Description
场效应管(MOSFET) 350mW 20V 630mA 1个N沟道 SOT-23
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Power | 350 W |
| Input Capacitance | 20pF |
| Drain-Source On-Resistance | 0.55Ω |
| Drain-Source Saturation Current | 0.41 A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,060
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.1142 | |
| 50+ | $ 0.0891 | |
| 150+ | $ 0.0766 | |
| 500+ | $ 0.0682 | |
| 3000+ | $ 0.0585 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDMN2004TK-7
N-Channel 20 V 550 mO Surface Mount Enhancement Mode Mosfet - SOT-523
Diodes
DMN2004TK-7
场效应管(MOSFET) 150mW 20V 540mA 1个N沟道 SOT-523
Diodes
DMN2004TK-7
MOSFET 20V N-CHANNEL
Diodes
DMN2004TK-HXY
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HUAXUANYANG
