Manufacturer
DiodesManufacturer Product Number
DMT10H009LCG-7
Description
场效应管(MOSFET) 1W 100V 12.4A;47A 1个N沟道 VDFN3333-8
Manufacturer Standard Lead Time
2-3
Detailed Description
场效应管(MOSFET) 1W 100V 12.4A;47A 1个N沟道 VDFN3333-8
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 100V |
| Power | 2.1W |
| Input Capacitance | 13.7 pF |
| Drain-Source Saturation Current | 47 A |
| Drain-Source On-Resistance | 0.0088 Ω |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5584 | |
| 100+ | $ 0.4595 | |
| 1000+ | $ 0.4164 | |
| 2000+ | $ 0.3941 |
Minimum:1/Multiple:1
Total amount: