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MMDT2227M-7
Manufacturer
DiodesManufacturer Product Number
MMDT2227M-7
Description
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Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Power | 300mW |
| Te Zheng Frequency | 300MHz |
| Ji She Ji Ji Chuan Voltage（vceo） | 40V |
| Ji Dian Ji Current（ic） | 600 mA |
| DC Gain (hFE@Ic, Vce) | 100@150 mA, 10 V |
| Ji Dian Ji Jie Zhi Current（icbo） | 10 nA |
| Jing Ti Guan Type | NPN, PNP |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1V@50mA, 500mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0808 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllMMDT2227Q-7-F
Bipolar (BJT) Transistor Array
Diodes
MMDT2227Q-7-F
三极管(BJT) 200mW 40V；60V 600mA NPN+PNP SOT-363
Diodes
MMDT2907A
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TECH PUBLIC
MMDT2907A
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JSCJ
