Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BFR106E6327HTSA1
Manufacturer
InfineonManufacturer Product Number
BFR106E6327HTSA1
Description
NPN Silicon RF Transistor
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Jing Ti Guan Type | NPN |
| Operating Temperature | 150℃ |
| Power | 700mW |
| Ji She Ji Ji Chuan Voltage（vceo） | 15V |
| Ji Dian Ji Current（ic） | 210mA |
| DC Gain (hFE@Ic, Vce) | 70@70mA, 8V |
| Te Zheng Frequency | 5GHz |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2312 | |
| 100+ | $ 0.1769 | |
| 750+ | $ 0.1462 | |
| 1500+ | $ 0.1323 | |
| 3000+ | $ 0.1212 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBFR181E6327HTSA1
Low Noise Silicon Bipolar RF Transistor NPN
Infineon
BFR181E6327HTSA1
Trans RF BJT NPN 12V 0.02A Automotive 3-Pin SOT-23 T/R
Infineon
BFR181WH6327XTSA1
TRANS RF NPN 12V 20MA SOT323
Infineon
BFR181WH6327XTSA1
Trans RF BJT NPN 12V 0.02A 175mW Automotive 3-Pin SOT-323 T/R
Infineon
