Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSC010NE2LSI
Manufacturer
InfineonManufacturer Product Number
BSC010NE2LSI
Description
场效应管(MOSFET) BSC010NE2LSI TDSON-8-EP(5x6)
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-Channel |
| Continuous Drain Current | 100A |
| Drain-Source Voltage | 25V |
| Power | 96W |
| On-Resistance | 1.05mΩ |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,755
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.1878 | |
| 10+ | $ 0.9776 | |
| 30+ | $ 0.8620 | |
| 100+ | $ 0.7311 | |
| 500+ | $ 0.6726 | |
| 1000+ | $ 0.6447 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBSC010NE2LSIATMA1
N-Channel 25 V 1.05 mOhm OptiMOS� Power-MOSFET - PG-TDSON-8
Infineon
BSC010NE2LSIATMA1
N-Channel 25 V 1.05 mOhm OptiMOS� Power-MOSFET - PG-TDSON-8
Infineon
BSC011N03LS
场效应管(MOSFET) 2.5W 30V 37A 1个N沟道 TDSON-8-EP(5x6)
Infineon
BSC011N03LS
原装正品
Infineon
