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BSC011N03LSIATMA1
Manufacturer
InfineonManufacturer Product Number
BSC011N03LSIATMA1
Description
晶体管: N-MOSFET; 单极; 30V; 100A; 96W; PG-TDSON-8; OptiMOS™
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source Saturation Current | 37A |
| Drain-Source On-Resistance | 0.0015Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 14,882
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 1.6014 | |
| 50+ | $ 1.0876 | |
| 250+ | $ 0.8759 | |
| 1000+ | $ 0.8313 | |
| 3000+ | $ 0.7004 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBSC011N03LSTATMA1
MOSFET DIFFERENTIATED MOSFETS
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BSC011N03LSTATMA1
表面贴装 N 沟道 30V 39A（Ta），100A（Tc） 3W（Ta），115W（Tc） PG-TDSON-8 FL
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KTP
BSC012N06NSATMA1
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