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BSC018NE2LSIATMA1
Manufacturer
InfineonManufacturer Product Number
BSC018NE2LSIATMA1
Description
晶体管: N-MOSFET; 单极; 25V; 29A; 69W; PG-TDSON-8; OptiMOS™
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Threshold Voltage | 2V@250μA |
| Drain-Source Voltage | 25V |
| Gate Charge | 36nC@10V |
| Power | 2.5 W, 69 W |
| Continuous Drain Current | 29 A, 100 A |
| On-Resistance | 1.8mΩ @ 30A, 10V |
| Input Capacitance | 2500pF@12V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 500
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6684 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBSC019N04LS
MOSFET DIFFERENTIATED MOSFETS
Infineon
BSC019N04LS
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Infineon
BSC019N04LSATMA1
晶体管: N-MOSFET; 单极; 40V; 100A; 78W; PG-TDSON-8; OptiMOS™
Infineon
BSC019N04NS G-VB
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Vbsemi
