Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSC019N04NSGATMA1
Manufacturer
InfineonManufacturer Product Number
BSC019N04NSGATMA1
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 40V |
| Power | 2.5W, 125W |
| On-Resistance | 1.9 mΩ @ 50 A, 10V |
| Continuous Drain Current | 30A, 100A |
| Gate Charge | 108nC@10V |
| Threshold Voltage | 4V@85µA |
| Input Capacitance | 8800pF@20V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 332
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.9776 | |
| 10+ | $ 0.8787 | |
| 30+ | $ 0.8244 | |
| 100+ | $ 0.7631 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBSC019N06NSATMA1
MOSFET DIFFERENTIATED MOSFETS
Infineon
BSC019N06NSATMA1
--
Infineon
BSC019N06NSATMA1
表面贴装 N 沟道 60V 100A（Ta） 136W（Ta） 8-TDSON（5x6）
Infineon
BSC019N08NS5ATMA1
--
Infineon
