Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSC025N03LSGATMA1
Manufacturer
InfineonManufacturer Product Number
BSC025N03LSGATMA1
Description
MOSFET N-CH 30V 100A TDSON-8
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 2.2 V @ 250 μA |
| Power | 2.5W, 83W |
| Gate Charge | 74nC @ 10V |
| Continuous Drain Current | 25 A, 100 A |
| On-Resistance | 2.5mΩ@30A, 10V |
| Input Capacitance | 6100pF@15V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 30
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.9776 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSC025N03MS G-HXY
--
HUAXUANYANG
BSC025N03MSG
场效应晶体管（FET） BSC025N03MSG
Infineon
BSC025N03MSGATMA1
N-Channel 30 V 100 A 2.5 mO 74 nC SMT OptiMOS Power Mosfet - TDSON-8
Infineon
BSC025N08LS5ATMA1
--
Infineon
