Manufacturer
InfineonManufacturer Product Number
BSC026N04LSATMA1
Description
晶体管: N-MOSFET; 单极; 40V; 100A; 63W; PG-TDSON-8; OptiMOS™
Manufacturer Standard Lead Time
3-5
Detailed Description
晶体管: N-MOSFET; 单极; 40V; 100A; 63W; PG-TDSON-8; OptiMOS™
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Threshold Voltage | 2V@250μA |
| Gate Charge | 32nC @ 10V |
| Drain-Source Voltage | 40V |
| Continuous Drain Current | 23A, 100A |
| Input Capacitance | 2300pF@20V |
| On-Resistance | 2.6 mΩ @ 50 A, 10 V |
| Power | 2.5W, 63W |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5542 |
Minimum:1/Multiple:1
Total amount: