Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSC028N06LS3 G
Manufacturer
InfineonManufacturer Product Number
BSC028N06LS3 G
Description
DISCRETE_MOSFET_POWER MOSFET
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 60 V |
| Type | N-Channel |
| Continuous Drain Current | 100A |
| Power | 139W |
| On-Resistance | 2.8mΩ@50A,10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 5.0006 | |
| 10+ | $ 2.7823 | |
| 30+ | $ 2.2712 | |
| 50+ | $ 2.1696 | |
| 100+ | $ 2.0930 | |
| 300+ | $ 2.0415 | |
| 500+ | $ 2.0317 | |
| 1000+ | $ 2.0234 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBSC028N06LS3GATMA1
N-Channel 60 V 2.8 mOhm OptiMOS�3 Power-MOSFET - PG-TDSON-8
Infineon
BSC028N06NS
Infineon OptiMOS 5 系列 Si N沟道 MOSFET BSC028N06NS, 100 A, Vds=60 V, 8引脚 TDSON封装
Infineon
BSC028N06NS
场效应管(MOSFET) 2.5W 60V 23A 1个N沟道 TDSON-8-EP(5x6)
Infineon
BSC028N06NS-HXY
--
HUAXUANYANG
