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BSD840NH6327
Manufacturer
InfineonManufacturer Product Number
BSD840NH6327
Description
场效应管(MOSFET) 500mW 20V 880mA 2个N沟道 SC-70-6(SOT-363)
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Power | 0.5W |
| Drain-Source Saturation Current | 3.5 A |
| Drain-Source On-Resistance | 0.4Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 853
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1156 | |
| 200+ | $ 0.0794 | |
| 1500+ | $ 0.0710 | |
| 3000+ | $ 0.0654 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBSD840NH6327XTSA1
Dual N-Channel 20 V 400 mO 0.26 nC OptiMOS 2 Small Signal Transistor - SOT-363
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