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BSP149H6327
Manufacturer
InfineonManufacturer Product Number
BSP149H6327
Description
场效应管(MOSFET) 1.8W 200V 660mA 1个N沟道 SOT-223-4
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Power | 1.8W |
| Drain-Source Voltage | 200 V |
| Continuous Drain Current | 660mA |
| On-Resistance | 1.8Ω@10V,660mA |
| Threshold Voltage | 1V@400μA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 265
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6823 | |
| 10+ | $ 0.5598 | |
| 30+ | $ 0.4971 | |
| 100+ | $ 0.4359 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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