Manufacturer
InfineonManufacturer Product Number
IDH04G65C6XKSA1
Description
The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innov
Manufacturer Standard Lead Time
2-3
Detailed Description
The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innov
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Er Ji Guan Pei Zhi | SINGLE |
| Operating Temperature | 0℃~100℃ |
| Fan Xiang Nai Ya | 650V |
| Zheng Xiang Ya Jiang | 1.35V |
| Fan Xiang Current | 14µA |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7074 | |
| 50+ | $ 0.6489 |
Minimum:1/Multiple:1
Total amount: