Manufacturer
InfineonManufacturer Product Number
IKA08N65ET6XKSA1
Description
IGBT 電晶體 Discrete 650 V TRENCHSTOP IGBT6 with soft, fast recovery anti-parallel Rapid diode
Manufacturer Standard Lead Time
3-5
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 33W |
| Ji Dian Ji Ji Chuan Voltage(vces) | 650V |
| Operating Temperature | -40℃ ~ 175℃ |
| Kai Qi Yan Chi Time | 20ns |
| Type | Trench Field Stop |
| Guan Duan Sun Hao | 40 µJ |
| Gate Charge | 17 nC |
| Dao Tong Sun Hao | 110 µJ |
| Ji Dian Ji Bao He Voltage(vce(sat)) | 1.9V@15V, 5A |
| Fan Xiang Hui Fu Time | 43ns |
| Ji Dian Ji Mai Chong Current(icm) | 25A |
| Guan Duan Yan Chi Time | 59ns |
| Ji Dian Ji Current(ic) | 11A |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5988 |
Minimum:1/Multiple:1
Total amount: