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IKB30N65ES5ATMA1
Manufacturer
InfineonManufacturer Product Number
IKB30N65ES5ATMA1
Description
IGBT 電晶體 INDUSTRY 14
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Fan Xiang Hui Fu Time | 75ns |
| Ji Dian Ji Ji Chuan Voltage（vces） | 650V |
| Operating Temperature | -40℃ ~ 175℃ |
| Power | 188W |
| Type | Trench Field Stop |
| Ji Dian Ji Mai Chong Current（icm） | 120A |
| Kai Qi Yan Chi Time | 17 ns |
| Dao Tong Sun Hao | 560µJ |
| Gate Charge | 70nC |
| Ji Dian Ji Current（ic） | 62A |
| Ji Dian Ji Bao He Voltage（vce(sat）) | 1.7V@15V, 30A |
| Guan Duan Yan Chi Time | 124ns |
| Guan Duan Sun Hao | 320µJ |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,612
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 4.6817 | |
| 10+ | $ 3.0747 | |
| 100+ | $ 2.1515 | |
| 500+ | $ 1.8980 | |
| 1000+ | $ 1.7588 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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