Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IKD08N65ET6ARMA1
Manufacturer
InfineonManufacturer Product Number
IKD08N65ET6ARMA1
Description
--
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Ji Dian Ji Current（ic） | 15A |
| Ji Dian Ji Ji Chuan Voltage（vces） | 650V |
| Operating Temperature | -40℃ ~ 175℃ |
| Kai Qi Yan Chi Time | 20ns |
| Power | 47W |
| Type | Trench Field Stop |
| Guan Duan Sun Hao | 40 µJ |
| Gate Charge | 17 nC |
| Dao Tong Sun Hao | 110 µJ |
| Ji Dian Ji Bao He Voltage（vce(sat）) | 1.9V@15V, 5A |
| Fan Xiang Hui Fu Time | 43ns |
| Ji Dian Ji Mai Chong Current（icm） | 25A |
| Guan Duan Yan Chi Time | 59ns |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.3619 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIKD10N60RATMA1
IKD10N60R Series 600 V 10 A Surface Mount Reverse conducting IGBT-PG-TO252-3
Infineon
IKD10N60RATMA1
IGBT-沟槽型场截止-600V-20A-150W-表面贴装型-PG-TO252-3
Infineon
IKD10N60RC2ATMA1
--
Infineon
IKD10N60RC2ATMA1
IGBT 電晶體
Infineon