Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IKW30N65ES5
Manufacturer
InfineonManufacturer Product Number
IKW30N65ES5
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Ji Dian Ji Ji Chuan Voltage（vces） | 650V |
| Operating Temperature | -40℃ ~ +175℃ |
| Type | IGBT |
| Power | 188W |
| Ji Dian Ji Bao He Voltage（vce(sat）) | 1.35V |
| Ji Dian Ji Mai Chong Current（icm） | 62A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 75
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.7572 | |
| 10+ | $ 2.3604 | |
| 30+ | $ 2.1125 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIKW30N65ES5XKSA1
Trans IGBT Chip N-CH 650V 62A 3-Pin(3+Tab) TO-247 Tube
Infineon
IKW30N65ES5XKSA1
Trans IGBT Chip N-CH 650V 62A 188000mW 3-Pin(3+Tab) TO-247 Tube
Infineon
IKW30N65ES5XKSA1
Transistor: IGBT; 650V; 39.5A; TO247-3
Infineon
IKW30N65ET7
未分类
Infineon
