Manufacturer
InfineonManufacturer Product Number
IMBF170R650M1XTMA1
Description
MOSFET SIC DISCRETE
Manufacturer Standard Lead Time
10-15
Detailed Description
MOSFET SIC DISCRETE
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Drain-Source Voltage | 1700V |
| Continuous Drain Current | 7.4A |
| Power | 88W |
| Gate Charge | 8nC@12V |
| On-Resistance | 650mΩ@1.5A, 15V |
| Threshold Voltage | 5.7V@1.7mA |
| Input Capacitance | 422pF@1000V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 10.4427 | |
| 10+ | $ 6.9669 | |
| 100+ | $ 4.9895 | |
| 500+ | $ 4.3851 |
Minimum:1/Multiple:1
Total amount: