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IMBG65R107M1HXTMA1
Manufacturer
InfineonManufacturer Product Number
IMBG65R107M1HXTMA1
Description
SILICON CARBIDE MOSFET PG-TO263-
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Drain-Source Voltage | 650V |
| Continuous Drain Current | 24A |
| Power | 110W |
| Gate Charge | 15nC@18V |
| Input Capacitance | 496pF @ 400V |
| On-Resistance | 141mΩ @ 8.9A, 18V |
| Threshold Voltage | 5.7V @ 2.6mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 790
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 11.9063 | |
| 10+ | $ 7.9876 | |
| 100+ | $ 5.7693 | |
| 500+ | $ 5.2220 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIMBG65R163M1HXTMA1
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