Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IMW65R030M1HXKSA1
Manufacturer
InfineonManufacturer Product Number
IMW65R030M1HXKSA1
Description
--
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 650V |
| Operating Temperature | -55℃ ~ +175℃ |
| Type | MOSFET |
| Gate Charge | 48nC |
| Continuous Drain Current | 58A |
| On-Resistance | 42 mΩ |
| Power | 197W |
| Threshold Voltage | 5.7V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 287
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 14.7679 | |
| 5+ | $ 14.4170 | |
| 10+ | $ 14.0675 | |
| 50+ | $ 13.7152 | |
| 100+ | $ 13.3656 | |
| 250+ | $ 13.0133 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIMW65R039M1HXKSA1
--
Infineon
IMW65R039M1HXKSA1
碳化硅场效应管(MOSFET) IMW65R039M1HXKSA1 TO-247-3-41
Infineon
IMW65R048M1HXKSA1
原装正品
Infineon
IMW65R057M1HXKSA1
--
Infineon
