Manufacturer
InfineonManufacturer Product Number
IPA60R190E6XKSA1
Description
晶体管: N-MOSFET; 单极; 600V; 20.2A; 34W; PG-TO220 FullPAK; CoolMOS™ E6
Manufacturer Standard Lead Time
3-5
Detailed Description
晶体管: N-MOSFET; 单极; 600V; 20.2A; 34W; PG-TO220 FullPAK; CoolMOS™ E6
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Gate Charge | 63nC@10V |
| Continuous Drain Current | 20.2 A |
| Power | 34 watt |
| On-Resistance | 190mΩ @ 9.5A, 10V |
| Threshold Voltage | 3.5V @ 630µA |
| Input Capacitance | 1400pF @ 100V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 3.2586 |
Minimum:1/Multiple:1
Total amount:
IPA60R190P6
Infineon CoolMOS P6 系列 Si N沟道 MOSFET IPA60R190P6, 20 A, Vds=650 V, 3引脚 TO-220FP封装
Infineon