Manufacturer
InfineonManufacturer Product Number
IPD031N03LGATMA1
Description
晶体管: N-MOSFET; 单极; 30V; 79A; 94W; PG-TO252-3; OptiMOS™ 3
Manufacturer Standard Lead Time
10-15
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 2.2 V @ 250 μA |
| Continuous Drain Current | 90 A |
| Power | 94W |
| Gate Charge | 51nC@10V |
| On-Resistance | 3.1mΩ@30A, 10V |
| Input Capacitance | 5300pF@15V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.8341 | |
| 5+ | $ 0.7506 | |
| 10+ | $ 0.7074 | |
| 25+ | $ 0.6782 |
Minimum:1/Multiple:1
Total amount: