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IPD034N06N3G
Manufacturer
InfineonManufacturer Product Number
IPD034N06N3G
Description
场效应管(MOSFET) 167W 60V 100A 1个N沟道 TO-252-2(DPAK)
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Drain-Source Voltage | 60 V |
| Continuous Drain Current | 100A |
| Power | 167W |
| On-Resistance | 3.4mΩ@10V,100A |
| Threshold Voltage | 4V@93μA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,760
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6796 | |
| 100+ | $ 0.5598 | |
| 1250+ | $ 0.5055 | |
| 2500+ | $ 0.4790 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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N-Channel 60 V 3.4 mOhm OptiMOSTM3 Power-Transistor -PG-TO-252-3
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IPD034N06N3GATMA1
N-Channel 60 V 3.4 mOhm OptiMOSTM3 Power-Transistor -PG-TO-252-3
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