Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPD050N10N5ATMA1
Manufacturer
InfineonManufacturer Product Number
IPD050N10N5ATMA1
Description
表面贴装 N 沟道 100V 80A（Tc） 150W（Tc） PG-TO252-3
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Power | 150W |
| Continuous Drain Current | 80A |
| Gate Charge | 64nC@10V |
| Threshold Voltage | 3.8 V @ 84 µA |
| On-Resistance | 5mΩ@40A, 10V |
| Input Capacitance | 4700pF@50V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 18
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.2909 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPD052N10NF2SATMA1
--
Infineon
IPD053N06N
场效应管(MOSFET) 3W 60V 18A 1个N沟道 TO-252-3
Infineon
IPD053N06NATMA1
Single N-Channel 60 V 5.3 mOhm 27 nC OptiMOS? Power Mosfet - TO-252-3
Infineon
IPD053N08N3G
场效应管(MOSFET) 150W 80V 90A 1个N沟道 TO-252-2(DPAK)
Infineon