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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPD068N10N3 G

Manufacturer

Infineon

Manufacturer Product Number

IPD068N10N3 G

Description

DISCRETE_MOSFET_POWER MOSFET

Manufacturer Standard Lead Time

10-15

Detailed Description

DISCRETE_MOSFET_POWER MOSFET

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Operating Temperature	-55℃ ~ 175℃
Type	N-Channel
Drain-Source Voltage	100 V
Power	150W
Continuous Drain Current	90 A
On-Resistance	6.8mΩ

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

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N-Channel 100 V 6.8 mOhm OptiMOS�3 Power-Transistor - PG-TO252-3

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