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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPD110N12N3GATMA1

Manufacturer

Infineon

Manufacturer Product Number

IPD110N12N3GATMA1

Description

场效应管(MOSFET) IPD110N12N3GATMA1 TO-252-3

Manufacturer Standard Lead Time

2-3

Detailed Description

场效应管(MOSFET) IPD110N12N3GATMA1 TO-252-3

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Drain-Source On-Resistance	0.011 Ω
Drain-Source Saturation Current	75A
Gate-Source Breakdown Voltage	120V

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 1

Quantity	Unit Price	Ext Price
1+	$ 0.9372
100+	$ 0.7743
1250+	$ 0.6977
2500+	$ 0.6629

Price For：Each

Minimum:1/Multiple:1

Total amount:

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