Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPD180N10N3GATMA1
Manufacturer
InfineonManufacturer Product Number
IPD180N10N3GATMA1
Description
场效应管(MOSFET) 71W 100V 43A 1个N沟道 TO-252-3
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Power | 71W |
| Gate Charge | 25nC@10V |
| Threshold Voltage | 3.5V@33µA |
| Continuous Drain Current | 43A |
| On-Resistance | 18mΩ @ 33A, 10V |
| Input Capacitance | 1800pF @ 50V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 378
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6782 | |
| 10+ | $ 0.6002 | |
| 30+ | $ 0.5598 | |
| 100+ | $ 0.5208 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPD18DP10LMATMA1
--
Infineon
IPD19DP10NMATMA1
--
Infineon
IPD200N15N3 G
DISCRETE_MOSFET_POWER MOSFET
Infineon
IPD200N15N3GATMA1
N-Channel 150 V 20 mOhm OptiMOSTM3 Power-Transistor -PG-TO-252-3
Infineon