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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPN60R1K0CEATMA1

Manufacturer

Infineon

Manufacturer Product Number

IPN60R1K0CEATMA1

Description

Infineon CoolMOS CE 系列 N沟道 MOSFET IPN60R1K0CEATMA1, 6.8 A, Vds=650 V, 3引脚 SOT-223封装

Manufacturer Standard Lead Time

10-15

Detailed Description

Infineon CoolMOS CE 系列 N沟道 MOSFET IPN60R1K0CEATMA1, 6.8 A, Vds=650 V, 3引脚 SOT-223封装

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Drain-Source Voltage	600V
Type	N-channel
Operating Temperature	-40℃~150℃
Power	5W
Gate Charge	13nC@10V
Continuous Drain Current	6.8A
On-Resistance	1Ω @ 1.5A, 10V
Threshold Voltage	3.5V @ 130µA
Input Capacitance	280pF @ 100V

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 13,740

Quantity	Unit Price	Ext Price
1+	$ 1.7602
10+	$ 1.1015
100+	$ 0.7158
500+	$ 0.5501
1000+	$ 0.4957

Price For：Each

Minimum:1/Multiple:1

Total amount:

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