Manufacturer
InfineonManufacturer Product Number
IPN60R1K0CEATMA1
Description
Infineon CoolMOS CE 系列 N沟道 MOSFET IPN60R1K0CEATMA1, 6.8 A, Vds=650 V, 3引脚 SOT-223封装
Manufacturer Standard Lead Time
10-15
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Operating Temperature | -40℃~150℃ |
| Power | 5W |
| Gate Charge | 13nC@10V |
| Continuous Drain Current | 6.8A |
| On-Resistance | 1Ω @ 1.5A, 10V |
| Threshold Voltage | 3.5V @ 130µA |
| Input Capacitance | 280pF @ 100V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7186 | |
| 10+ | $ 0.5584 | |
| 100+ | $ 0.4108 | |
| 500+ | $ 0.3565 | |
| 1000+ | $ 0.3189 | |
| 5000+ | $ 0.2813 |
Minimum:1/Multiple:1
Total amount: