Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPN70R1K0CEATMA1
Manufacturer
InfineonManufacturer Product Number
IPN70R1K0CEATMA1
Description
表面贴装 N 沟道 750V 7.4A（Tc） 5W（Tc） PG-SOT223
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
| Type | N-Channel |
| Continuous Drain Current | 7.4A (Tc) |
| Power | 5W (Tc) |
| Gate Charge | 14.9 nC @ 10V |
| Drain-Source Voltage | 700V |
| On-Resistance | 1 ohm @ 1.5A, 10V |
| Threshold Voltage | 3.5V @ 150µA |
| Input Capacitance | 328 pF @ 100 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 20
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.9748 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPN70R1K2P7SATMA1
表面贴装 N 沟道 700V 4.5A（Tc） 6.3W（Tc） PG-SOT223
Infineon
IPN70R1K4P7S
场效应管(MOSFET) 6.2W 700V 4A 1个N沟道 SOT-223-3
Infineon
IPN70R1K4P7SATMA1
Single N-Channel 700 V 1.4 Ohm 4.7 nC CoolMOS� Power Mosfet - SOT-223
Infineon
IPN70R1K5CEATMA1
Infineon CoolMOS CE 系列 N沟道 MOSFET IPN70R1K5CEATMA1, 5.4 A, Vds=750 V, 3引脚 SOT-223封装
Infineon