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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPN80R1K2P7ATMA1

Manufacturer

Infineon

Manufacturer Product Number

IPN80R1K2P7ATMA1

Description

表面贴装 N 沟道 800V 4.5A（Tc） 6.8W（Tc） PG-SOT223

Manufacturer Standard Lead Time

3-5

Detailed Description

表面贴装 N 沟道 800V 4.5A（Tc） 6.8W（Tc） PG-SOT223

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Drain-Source On-Resistance	1.2Ω
Gate-Source Breakdown Voltage	800V

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 14

Quantity	Unit Price	Ext Price
1+	$ 0.7951

Price For：Each

Minimum:1/Multiple:1

Total amount:

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IPN80R1K4P7ATMA1

Single N-Channel 800 V 1.4 Ohm 10 nC CoolMOS� Power Mosfet - SOT-223

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IPN80R2K0P7ATMA1

Single N-Channel 800 V 2 Ohm 9 nC CoolMOS� Power Mosfet - SOT-223

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IPN80R2K4P7ATMA1

表面贴装 N 沟道 800V 2.5A（Tc） 6.3W（Tc） PG-SOT223

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IPN80R3K3P7ATMA1

表面贴装 N 沟道 800V 1.9A（Tc） 6.1W（Tc） PG-SOT223

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